s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t n-cha nne l mo s f e t 2 sk2 2 1 1 feat ur es v d s ( v ) = 30v i d = 1a r d s ( o n ) 0.75 ( v g s = 4v ) r d s ( o n ) 0.6 ( v g s = 10v ) 1.70 0.1 0.42 0.1 0.46 0.1 1.gate 2.drain 3.source a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s 30 g ate- s our c e v ol tage v g s 20 conti nuous dr ai n cur r ent i d 1 p ul s ed dr ai n cur r ent i d m 2 p ow er di s s i pati on p d 1 w j unc ti on t em per atur e t j 150 s tor age t em per atur e range t st g - 55 to 150 v a e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 100 a , v g s = 0v 30 g ate to s our c e v ol tage v g s s i g s = 100 a , v d s = 0v 20 z er o g ate v ol tage dr ai n cur r ent i d s s v d s = 25v , v g s = 0v 10 ua g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 15v 10 ua g ate thr es hol d v ol tage v g s ( t h ) v d s = 5v i d = 1m a 0.8 2 v v g s = 4v , i d = 0.5a 0.75 v g s = 10v , i d = 0.5a 0.6 f or w ar d t r ans c onduc tanc e g fs v d s = 10 v , i d = 0.5 a 0.5 s input capac i tanc e c i ss 87 o utput capac i tanc e c o ss 69 rev er s e t r ans fer capac i tanc e c r ss 23 t ur n- o n del ay t i m e t d ( o n ) 12 t ur n- o ff del ay t i m e t d ( o f f ) 60 t ur n- o ff f al l t i m e t f 160 v pf s tati c dr ai n- s our c e o n- res i s tanc e r d s ( o n ) v g s = 10v , v d s = 10v , i d = 0.5a , r l = 10 v g s = 0v , v d s = 10v , f= 1m hz ns mar k ing m ar k i ng 2m d s g
s m d ty p e w w w . kexin . com . c n 2 m osfe t n-cha nne l mo s f e t 2 sk2 2 1 1 ty pic al c har ac t er is it ic s i d ? v d s i d ? v d s r d s ? i d ? y f s ? ? i d c is s , c os s , c r s s ? v d s r d s ? v d s 2 1 0 10 8 2 6 4 0 3.0 2.5 2.0 1.5 1.0 0.5 t a = 25c 3.0 v 2.5 v 2.0 v v gs = 3.5 v drain to source voltage v ds ( v ) drain current i d ( a ) 6 0 5 4 1 3 2 0 3.0 2.5 2.0 1.5 1.0 0.5 v ds =10 v t a = 25c gate to source voltage v gs ( v ) drain current i d ( a ) 2 1 0 10 8 2 6 4 0 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 i d = 0.5 a t a = 25c gate to source voltage v gs ( v ) drain to source on-resistance r ds(on) ( ? ) 5 . 2 0 2.0 0.5 1.5 1.0 0 1.4 1.2 1.0 0.6 0.8 0.4 0.2 t a = 25c v gs = 4 v 10 v drain current i d ( a ) drain to source on-resistance r ds(on) ( ? ) 5 . 2 0 2.0 0.5 1.5 1.0 0 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 v ds = 10 v f = 1 khz t a = 25c drain current i d ( a ) forward transfer admittance |y fs | ( s ) 0.3 10 1 30 3 100 300 0 140 120 100 60 80 40 20 f = 1 mhz t a = 25c c iss c oss c rss drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf )
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